Toshiba Semiconductor and Storage
MOSFET N-CH 650V 7.8A IPAK
TK8Q65W,S1Q is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 7.8A IPAK. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.
In Stock: 7
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 670mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Stub Leads, IPak |
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