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TK6R8A08QM,S4X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK6R8A08QM,S4X

Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 6.8MOHM

TK6R8A08QM,S4X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS10 TO-220SIS 80V 6.8MOHM. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-220-3 Full Pack.

In Stock: 100

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 29A, 10V
Vgs(th) (Max) @ Id3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 40 V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature175°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

TK6R8A08QM,S4X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. UMOS10 TO-220SIS 80V 6.8MOHM

The mounting type of TK6R8A08QM,S4X is Through Hole.

The operating temperature range of TK6R8A08QM,S4X is 175°C.

The package type of TK6R8A08QM,S4X is TO-220-3 Full Pack.

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