Toshiba Semiconductor and Storage
MOSFET N-CH 600V 61.8A TO3P
TK62J60W,S1VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 61.8A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3P-3, SC-65-3.
In Stock: 20
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 61.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 30.9A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 3.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 300 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
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