Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR TO2
TK49N65W,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. PB-F POWER MOSFET TRANSISTOR TO2. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-247-3.
In Stock: 113
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 49.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 24.6A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
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