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TK3R2A10PL,S4X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK3R2A10PL,S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

TK3R2A10PL,S4X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature 175°C, package / case TO-220-3 Full Pack.

In Stock: 45

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs161 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9500 pF @ 50 V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature175°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

TK3R2A10PL,S4X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR

The mounting type of TK3R2A10PL,S4X is Through Hole.

The operating temperature range of TK3R2A10PL,S4X is 175°C.

The package type of TK3R2A10PL,S4X is TO-220-3 Full Pack.

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