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TK31Z60X,S1F - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK31Z60X,S1F

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

TK31Z60X,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-247-4.

In Stock: 60

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

Frequently Asked Questions

TK31Z60X,S1F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR

The mounting type of TK31Z60X,S1F is Through Hole.

The operating temperature range of TK31Z60X,S1F is 150°C.

The package type of TK31Z60X,S1F is TO-247-4.

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