Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A 4DFN
TK31V60X,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 30.8A 4DFN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 4-VSFN Exposed Pad.
In Stock: 4,980
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 9.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Package / Case | 4-VSFN Exposed Pad |
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