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TK28A65W,S5X - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK28A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO220SIS

TK28A65W,S5X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 27.6A TO220SIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 40

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 300 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

TK28A65W,S5X is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 27.6A TO220SIS

The mounting type of TK28A65W,S5X is Through Hole.

The operating temperature range of TK28A65W,S5X is 150°C (TJ).

The package type of TK28A65W,S5X is TO-220-3 Full Pack.

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