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TK20J60W,S1VE - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK20J60W,S1VE

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

TK20J60W,S1VE is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature 150°C, package / case TO-3P-3, SC-65-3.

In Stock: 57

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 300 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3

Frequently Asked Questions

TK20J60W,S1VE is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. X35 PB-F POWER MOSFET TRANSISTOR

The mounting type of TK20J60W,S1VE is Through Hole.

The operating temperature range of TK20J60W,S1VE is 150°C.

The package type of TK20J60W,S1VE is TO-3P-3, SC-65-3.

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