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TK10P60W,RVQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK10P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 9.7A DPAK

TK10P60W,RVQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 9.7A DPAK. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 11,089

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 300 V
FET FeatureSuper Junction
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Frequently Asked Questions

TK10P60W,RVQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N CH 600V 9.7A DPAK

The mounting type of TK10P60W,RVQ is Surface Mount.

The operating temperature range of TK10P60W,RVQ is 150°C (TJ).

The package type of TK10P60W,RVQ is TO-252-3, DPak (2 Leads + Tab), SC-63.

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