Toshiba Semiconductor and Storage
MOSFET N-CH 600V 100A TO3P
TK100L60W,VQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 600V 100A TO3P. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-3PL.
In Stock: 15
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 30 V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 797W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(L) |
| Package / Case | TO-3PL |
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