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TK099V65Z,LQ - Toshiba Semiconductor and Storage - Transistors - FETs, MOSFETs - Single

TK099V65Z,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A 5DFN

TK099V65Z,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 30A 5DFN. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case 4-VSFN Exposed Pad.

In Stock: 12,000

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 300 V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package5-DFN (8x8)
Package / Case4-VSFN Exposed Pad

Frequently Asked Questions

TK099V65Z,LQ is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 650V 30A 5DFN

The mounting type of TK099V65Z,LQ is Surface Mount.

The operating temperature range of TK099V65Z,LQ is 150°C.

The package type of TK099V65Z,LQ is 4-VSFN Exposed Pad.

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