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TDTC114E,LM - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased

TDTC114E,LM

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SOT23

TDTC114E,LM is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A SOT23. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA, power - max 320 mW.

In Stock: 9,279

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max320 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Frequently Asked Questions

TDTC114E,LM is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A SOT23

The mounting type of TDTC114E,LM is Surface Mount.

The package type of TDTC114E,LM is TO-236-3, SC-59, SOT-23-3.

The current rating of TDTC114E,LM is 100 mA.

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Manufacturers in Transistors - Bipolar (BJT) - Single, Pre-Biased

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