Toshiba Semiconductor and Storage
MOSFET N-CH 30V 1.9A ES6
SSM6K208FE,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 30V 1.9A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-563, SOT-666.
In Stock: 7,940
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 1A, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 |
| Package / Case | SOT-563, SOT-666 |
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