Toshiba Semiconductor and Storage
MOSFET P-CH 30V 3.6A ES6
SSM6J214FE(TE85L,F is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 30V 3.6A ES6. Key specifications: mounting type Surface Mount, operating temperature 150°C, package / case SOT-563, SOT-666.
In Stock: 30,353
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 |
| Package / Case | SOT-563, SOT-666 |
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