Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A 6UDFN
SSM6H19NU,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET N-CH 40V 2A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-UDFN Exposed Pad.
In Stock: 54,380
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1A, 8V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.2 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFN (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
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