Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2A 6UDFN
SSM6G18NU,LF is a Transistors - FETs, MOSFETs - Single manufactured by Toshiba Semiconductor and Storage. MOSFET P-CH 20V 2A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-WDFN Exposed Pad.
In Stock: 5,762
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-µDFN (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
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