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RN2910,LF(CT - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN2910,LF(CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

RN2910,LF(CT is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.. Key specifications: mounting type Surface Mount, package / case SC-61AA, current - collector (ic) (max) 100mA, power - max 200mW.

In Stock: 6,000

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-61AA
Supplier Device PackageSMQ

Frequently Asked Questions

RN2910,LF(CT is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNPX2 BRT Q1BSR4.7KOHM Q1BERINF.

The mounting type of RN2910,LF(CT is Surface Mount.

The package type of RN2910,LF(CT is SC-61AA.

The current rating of RN2910,LF(CT is 100mA.

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