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RN2711,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN2711,LF

Toshiba Semiconductor and Storage

PNP X 2 BRT Q1BSR=10KOHM Q1BER=I

RN2711,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNP X 2 BRT Q1BSR=10KOHM Q1BER=I. Key specifications: mounting type Surface Mount, package / case 5-TSSOP, SC-70-5, SOT-353, current - collector (ic) (max) 100mA, power - max 200mW.

In Stock: 5,900

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case5-TSSOP, SC-70-5, SOT-353
Supplier Device PackageUSV

Frequently Asked Questions

RN2711,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNP X 2 BRT Q1BSR=10KOHM Q1BER=I

The mounting type of RN2711,LF is Surface Mount.

The package type of RN2711,LF is 5-TSSOP, SC-70-5, SOT-353.

The current rating of RN2711,LF is 100mA.

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