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RN2709,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN2709,LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

RN2709,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNPX2 BRT Q1BSR22KOHM Q1BER47KOH. Key specifications: mounting type Surface Mount, package / case 5-TSSOP, SC-70-5, SOT-353, current - collector (ic) (max) 100mA, power - max 200mW.

In Stock: 6,000

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case5-TSSOP, SC-70-5, SOT-353
Supplier Device PackageUSV

Frequently Asked Questions

RN2709,LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

The mounting type of RN2709,LF is Surface Mount.

The package type of RN2709,LF is 5-TSSOP, SC-70-5, SOT-353.

The current rating of RN2709,LF is 100mA.

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Manufacturers in Transistors - Bipolar (BJT) - Arrays, Pre-Biased

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