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RN2407,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased

RN2407,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SMINI

RN2407,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS PNP 50V 0.1A SMINI. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA, power - max 200 mW.

In Stock: 191

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

Frequently Asked Questions

RN2407,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS PNP 50V 0.1A SMINI

The mounting type of RN2407,LF is Surface Mount.

The package type of RN2407,LF is TO-236-3, SC-59, SOT-23-3.

The current rating of RN2407,LF is 100 mA.

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