Toshiba Semiconductor and Storage
AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
RN2101MFV,L3XHF(CT is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER. Key specifications: mounting type Surface Mount, package / case SOT-723, current - collector (ic) (max) 100 mA, power - max 150 mW.
In Stock: 6,220
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250 MHz |
| Power - Max | 150 mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
Submit your RFQ for RN2101MFV,L3XHF(CT and get a quote within 24 hours.
3J LIMITED
