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RN1964TE85LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN1964TE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1964TE85LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS 2NPN PREBIAS 0.2W US6. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 200mW.

In Stock: 2,840

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

Frequently Asked Questions

RN1964TE85LF is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS 2NPN PREBIAS 0.2W US6

The mounting type of RN1964TE85LF is Surface Mount.

The package type of RN1964TE85LF is 6-TSSOP, SC-88, SOT-363.

The current rating of RN1964TE85LF is 100mA.

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