Toshiba Semiconductor and Storage
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
RN1708JE(TE85L,F) is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by Toshiba Semiconductor and Storage. NPN X 2 BRT Q1BSR=22KOHM Q1BER=4. Key specifications: mounting type Surface Mount, package / case SOT-553, current - collector (ic) (max) 100mA, power - max 100mW.
In Stock: 3,890
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
Submit your RFQ for RN1708JE(TE85L,F) and get a quote within 24 hours.
3J LIMITED
