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RN1306,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1306,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

RN1306,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A USM. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 100 mW.

In Stock: 4

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250 MHz
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

Frequently Asked Questions

RN1306,LF is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.1A USM

The mounting type of RN1306,LF is Surface Mount.

The package type of RN1306,LF is SC-70, SOT-323.

The current rating of RN1306,LF is 100 mA.

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