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RN1113ACT(TPL3) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1113ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.08A CST3

RN1113ACT(TPL3) is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.08A CST3. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 80 mA, power - max 100 mW.

In Stock: 9,990

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)80 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max100 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageCST3

Frequently Asked Questions

RN1113ACT(TPL3) is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS NPN 50V 0.08A CST3

The mounting type of RN1113ACT(TPL3) is Surface Mount.

The package type of RN1113ACT(TPL3) is SC-101, SOT-883.

The current rating of RN1113ACT(TPL3) is 80 mA.

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