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MT3S113(TE85L,F) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - RF

MT3S113(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

MT3S113(TE85L,F) is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS NPN 5.3V 12.5GHZ SMINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100mA.

In Stock: 3,933

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.3V
Frequency - Transition12.5GHz
Noise Figure (dB Typ @ f)1.45dB @ 1GHz
Gain11.8dB
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

Frequently Asked Questions

MT3S113(TE85L,F) is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS NPN 5.3V 12.5GHZ SMINI

The mounting type of MT3S113(TE85L,F) is Surface Mount.

The operating temperature range of MT3S113(TE85L,F) is 150°C (TJ).

The package type of MT3S113(TE85L,F) is TO-236-3, SC-59, SOT-23-3.

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