Toshiba Semiconductor and Storage
RF SIGE NPN BIPOLAR TRANSISTOR N
MT3S111TU,LF is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF SIGE NPN BIPOLAR TRANSISTOR N. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-SMD, Flat Lead, current - collector (ic) (max) 100mA.
In Stock: 15,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Gain | 12.5dB |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Supplier Device Package | UFM |
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3J LIMITED
