Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
MT3S111(TE85L,F) is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS NPN 6V 11.5GHZ SMINI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100mA.
In Stock: 7,592
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 11.5GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Gain | 12dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
Submit your RFQ for MT3S111(TE85L,F) and get a quote within 24 hours.
3J LIMITED
