Toshiba Semiconductor and Storage
RF TRANS 2 NPN 12V 7GHZ US6
HN3C10FUTE85LF is a Transistors - Bipolar (BJT) - RF manufactured by Toshiba Semiconductor and Storage. RF TRANS 2 NPN 12V 7GHZ US6. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 80mA, power - max 200mW.
In Stock: 101
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Gain | 11.5dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
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