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2SA1955FVBTPL3Z - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single

2SA1955FVBTPL3Z

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.4A VESM

2SA1955FVBTPL3Z is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 12V 0.4A VESM. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case SOT-723, current - collector (ic) (max) 400 mA.

In Stock: 2,705

Product Attributes

AttributeValue
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)400 mA
Voltage - Collector Emitter Breakdown (Max)12 V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Power - Max100 mW
Frequency - Transition130MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

Frequently Asked Questions

2SA1955FVBTPL3Z is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 12V 0.4A VESM

The mounting type of 2SA1955FVBTPL3Z is Surface Mount.

The operating temperature range of 2SA1955FVBTPL3Z is 150°C (TJ).

The package type of 2SA1955FVBTPL3Z is SOT-723.

Yes, 2SA1955FVBTPL3Z is listed as Obsolete. Consider requesting a quote for alternative parts.

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Manufacturers in Transistors - Bipolar (BJT) - Single

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