IC FLASH 4GBIT PARALLEL 67VFBGA
TH58BYG2S3HBAI6 is a Memory manufactured by Kioxia America, Inc.. IC FLASH 4GBIT PARALLEL 67VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 67-VFBGA.
In Stock: 6,508
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| TC58NYG2S0HBAI6 | Kioxia America, Inc. | IC FLASH 4GBIT PARALLEL 67VFBGA | 100% | View |
| W29N01HZBINA | Winbond Electronics | 1G-BIT NAND FLASH, 1.8V, 1-BIT E | 100% | View |
| TH58BYG3S0HBAI4 | Kioxia America, Inc. | IC FLASH 8GBIT PARALLEL 63TFBGA | 100% | View |
| W71NW11GF1EW | Winbond Electronics | 1G-BIT 1.8V NAND + 1G-BIT LPDDR2 | 100% | View |
| CY14B101NA-ZS25XIT | Infineon Technologies | IC NVSRAM 1MBIT PAR 44TSOP II | 90% | View |
| CY14B108N-ZSP25XIT | Infineon Technologies | IC NVSRAM 8MBIT PAR 54TSOP II | 90% | View |
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