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TPS1100DR - Texas Instruments - Transistors - FETs, MOSFETs - Single

TPS1100DR

Texas Instruments

MOSFET P-CH 15V 1.6A 8SOIC

TPS1100DR is a Transistors - FETs, MOSFETs - Single manufactured by Texas Instruments. MOSFET P-CH 15V 1.6A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 564

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)15 V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.45 nC @ 10 V
Vgs (Max)+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)791mW (Ta)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Frequently Asked Questions

TPS1100DR is a Transistors - FETs, MOSFETs - Single manufactured by Texas Instruments. MOSFET P-CH 15V 1.6A 8SOIC

The mounting type of TPS1100DR is Surface Mount.

The operating temperature range of TPS1100DR is -40°C ~ 150°C (TJ).

The package type of TPS1100DR is 8-SOIC (0.154", 3.90mm Width).

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