IC NVSRAM 1MBIT PAR 32DIP MODULE
BQ4013YMA-120 is a Memory manufactured by Texas Instruments. IC NVSRAM 1MBIT PAR 32DIP MODULE. Key specifications: mounting type Through Hole, operating temperature 0°C ~ 70°C (TA), voltage - supply 4.5V ~ 5.5V, package / case 32-DIP Module (0.610", 15.49mm).
In Stock: 6,602
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 120ns |
| Access Time | 120 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 32-DIP Module (0.610", 15.49mm) |
| Supplier Device Package | 32-DIP Module (18.42x42.8) |
BQ4013YMA-120 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| M27C2001-12F6 | STMicroelectronics | IC EPROM 2MBIT PARALLEL 32CDIP | 100% | View |
| AT27C080-12PI | Microchip Technology | IC EPROM 8MBIT PARALLEL 32DIP | 100% | View |
| AT27C4096-12PC | Microchip Technology | IC EPROM 4MBIT PARALLEL 40DIP | 100% | View |
| AT27C040-12PC | Microchip Technology | IC EPROM 4MBIT PARALLEL 32DIP | 100% | View |
| 27C010-120DI | Rochester Electronics, LLC | 27C010 EPROM | 100% | View |
| HN27C4001G12 | Renesas Electronics America Inc | UV EPROM, 512KX8, 120NS | 100% | View |
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