Taiwan Semiconductor Corporation
MOSFET N-CH 650V 7A ITO220
TSM7ND65CI is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 650V 7A ITO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.
In Stock: 3,916
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1124 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ITO-220 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
Submit your RFQ for TSM7ND65CI and get a quote within 24 hours.
3J LIMITED
