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TSM60NB041PW C1G - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single

TSM60NB041PW C1G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 78A TO247

TSM60NB041PW C1G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CHANNEL 600V 78A TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 2,489

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs139 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6120 pF @ 100 V
FET Feature-
Power Dissipation (Max)446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

Frequently Asked Questions

TSM60NB041PW C1G is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CHANNEL 600V 78A TO247

The mounting type of TSM60NB041PW C1G is Through Hole.

The operating temperature range of TSM60NB041PW C1G is -55°C ~ 150°C (TJ).

The package type of TSM60NB041PW C1G is TO-247-3.

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