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TSM180N03PQ33 RGG - Taiwan Semiconductor Corporation - Transistors - FETs, MOSFETs - Single

TSM180N03PQ33 RGG

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 25A 8PDFN

TSM180N03PQ33 RGG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 30V 25A 8PDFN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerWDFN.

In Stock: 39

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds345 pF @ 25 V
FET Feature-
Power Dissipation (Max)21W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (3x3)
Package / Case8-PowerWDFN

Frequently Asked Questions

TSM180N03PQ33 RGG is a Transistors - FETs, MOSFETs - Single manufactured by Taiwan Semiconductor Corporation. MOSFET N-CH 30V 25A 8PDFN

The mounting type of TSM180N03PQ33 RGG is Surface Mount.

The operating temperature range of TSM180N03PQ33 RGG is 150°C (TJ).

The package type of TSM180N03PQ33 RGG is 8-PowerWDFN.

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