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TSCDT20120G2H - Taiwan Semiconductor Corporation - Diodes - RF

TSCDT20120G2H

Taiwan Semiconductor Corporation

20A, 1200V, AUTOMOTIVE, SIC SCHO

TSCDT20120G2H is a Diodes - RF manufactured by Taiwan Semiconductor Corporation. 20A, 1200V, AUTOMOTIVE, SIC SCHO. Key specifications: operating temperature -55°C ~ 175°C (TJ), package / case TO-220-2, current - max 20 A.

In Stock: 1,000

Product Attributes

AttributeValue
Diode TypeSchottky - Single
Voltage - Peak Reverse (Max)1200V
Current - Max20 A
Capacitance @ Vr, F72pF @ 800V, 1MHz
Resistance @ If, F-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Package / CaseTO-220-2
Supplier Device PackageTO-220AC

Frequently Asked Questions

TSCDT20120G2H is a Diodes - RF manufactured by Taiwan Semiconductor Corporation. 20A, 1200V, AUTOMOTIVE, SIC SCHO

The operating temperature range of TSCDT20120G2H is -55°C ~ 175°C (TJ).

The package type of TSCDT20120G2H is TO-220-2.

The current rating of TSCDT20120G2H is 20 A.

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