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TSCDM10065G1 - Taiwan Semiconductor Corporation - Diodes - RF

TSCDM10065G1

Taiwan Semiconductor Corporation

10A, 650V, SIC SCHOTTKY DIODE, T

TSCDM10065G1 is a Diodes - RF manufactured by Taiwan Semiconductor Corporation. 10A, 650V, SIC SCHOTTKY DIODE, T. Key specifications: operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPAK (2 Leads + Tab), SC-63, current - max 10 A.

In Stock: 2,500

Product Attributes

AttributeValue
Diode TypePIN - Single
Voltage - Peak Reverse (Max)650V
Current - Max10 A
Capacitance @ Vr, F45pF @ 400V, 1MHz
Resistance @ If, F-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (DPAK)

Frequently Asked Questions

TSCDM10065G1 is a Diodes - RF manufactured by Taiwan Semiconductor Corporation. 10A, 650V, SIC SCHOTTKY DIODE, T

The operating temperature range of TSCDM10065G1 is -55°C ~ 175°C (TJ).

The package type of TSCDM10065G1 is TO-252-3, DPAK (2 Leads + Tab), SC-63.

The current rating of TSCDM10065G1 is 10 A.

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