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STW58N65DM2AG - STMicroelectronics - Transistors - FETs, MOSFETs - Single

STW58N65DM2AG

STMicroelectronics

MOSFET N-CH 650V 48A TO247

STW58N65DM2AG is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. MOSFET N-CH 650V 48A TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

In Stock: 41

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 100 V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Frequently Asked Questions

STW58N65DM2AG is a Transistors - FETs, MOSFETs - Single manufactured by STMicroelectronics. MOSFET N-CH 650V 48A TO247

The mounting type of STW58N65DM2AG is Through Hole.

The operating temperature range of STW58N65DM2AG is -55°C ~ 150°C (TJ).

The package type of STW58N65DM2AG is TO-247-3.

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