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K6F3216U6M-EF70T - Samsung Semiconductor, Inc. - Memory

K6F3216U6M-EF70T

Samsung Semiconductor, Inc.

SRAM ASYNC SLOW 32MB 2Mx16 3V 55

K6F3216U6M-EF70T is a Memory manufactured by Samsung Semiconductor, Inc.. SRAM ASYNC SLOW 32MB 2Mx16 3V 55. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, supplier device package 55-TFBGA (7.5x12).

In Stock: 800

Product Attributes

AttributeValue
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Asynchronous
Memory Size32Mbit
Memory Organization2M x 16
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page70ns
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case-
Supplier Device Package55-TFBGA (7.5x12)

Frequently Asked Questions

K6F3216U6M-EF70T is a Memory manufactured by Samsung Semiconductor, Inc.. SRAM ASYNC SLOW 32MB 2Mx16 3V 55

The mounting type of K6F3216U6M-EF70T is Surface Mount.

The operating temperature range of K6F3216U6M-EF70T is -40°C ~ 85°C (TA).

The supply voltage of K6F3216U6M-EF70T is 2.7V ~ 3.6V.

The memory specification of K6F3216U6M-EF70T is 32Mbit.

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