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K6F2016U4E-EF70T - Samsung Semiconductor, Inc. - Memory

K6F2016U4E-EF70T

Samsung Semiconductor, Inc.

SRAM ASYNC SLOW 2M 128Kx16 3.3V

K6F2016U4E-EF70T is a Memory manufactured by Samsung Semiconductor, Inc.. SRAM ASYNC SLOW 2M 128Kx16 3.3V. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, supplier device package 48-TFBGA (6x7).

In Stock: 2,127

Product Attributes

AttributeValue
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Asynchronous
Memory Size2Mbit
Memory Organization128K x 16
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page70ns
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case-
Supplier Device Package48-TFBGA (6x7)

Frequently Asked Questions

K6F2016U4E-EF70T is a Memory manufactured by Samsung Semiconductor, Inc.. SRAM ASYNC SLOW 2M 128Kx16 3.3V

The mounting type of K6F2016U4E-EF70T is Surface Mount.

The operating temperature range of K6F2016U4E-EF70T is -40°C ~ 85°C (TA).

The supply voltage of K6F2016U4E-EF70T is 2.7V ~ 3.6V.

The memory specification of K6F2016U4E-EF70T is 2Mbit.

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