CACHE SRAM, 512KX18, 3NS
CY7C1362A-200BGC is a Memory manufactured by Rochester Electronics, LLC. CACHE SRAM, 512KX18, 3NS. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3.135V ~ 3.6V, package / case 119-BGA.
In Stock: 298
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mb (512K x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3 ns |
| Voltage - Supply | 3.135V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS61NLP102418B-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 18MBIT PARALLEL 100LQFP | 100% | View |
| IS61LPS51236B-200B3LI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 18MBIT PARALLEL 165TFBGA | 100% | View |
| CY7C1470BV33-250BZXC | Infineon Technologies | IC SRAM 72MBIT PARALLEL 165FBGA | 100% | View |
| CY7C1370KV33-200BZXI | Infineon Technologies | IC SRAM 18MBIT PARALLEL 165FBGA | 100% | View |
| IS61LPS102418B-200B3LI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 18MBIT PARALLEL 165TFBGA | 100% | View |
| CY7C1380KV33-200AXC | Infineon Technologies | IC SRAM 18MBIT PARALLEL 100TQFP | 100% | View |
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