ZBT SRAM, 512KX18, 2.8NS
CY7C1356CV25-250AXC is a Memory manufactured by Rochester Electronics, LLC. ZBT SRAM, 512KX18, 2.8NS. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.375V ~ 2.625V, package / case 100-LQFP.
In Stock: 4,977
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 9Mb (512K x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 2.8 ns |
| Voltage - Supply | 2.375V ~ 2.625V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x20) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS61VPS102436B-250B3L | ISSI, Integrated Silicon Solution Inc | IC SRAM 36MBIT PARALLEL 165TFBGA | 100% | View |
| CY7C1354C-250AXC | Rochester Electronics, LLC | ZBT SRAM, 256KX36, 2.8NS | 96% | View |
| CY7C1356C-250AXC | Infineon Technologies | IC SRAM 9MBIT PARALLEL 100TQFP | 96% | View |
| CY7C1362A-225BGC | Rochester Electronics, LLC | CACHE SRAM, 512KX18, 2.5NS | 91% | View |
| MT58L256L18P1T-5 | Micron Technology Inc. | IC SRAM 4MBIT PARALLEL 100TQFP | 85% | View |
| CY7C1350G-200AXC | Infineon Technologies | IC SRAM 4.5MBIT PARALLEL 100TQFP | 85% | View |
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