DUAL-PORT SRAM, 4KX8, 20NS
CY7C135-20JCT is a Memory manufactured by Rochester Electronics, LLC. DUAL-PORT SRAM, 4KX8, 20NS. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 4.5V ~ 5.5V, package / case 52-LCC (J-Lead).
In Stock: 242
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 32Kb (4K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 52-LCC (J-Lead) |
| Supplier Device Package | 52-PLCC (19.13x19.13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 7006S20J | Renesas Electronics America Inc | IC SRAM 128KBIT PARALLEL 68PLCC | 100% | View |
| 7133LA20J8 | Renesas Electronics America Inc | IC SRAM 32KBIT PARALLEL 68PLCC | 100% | View |
| 70914S20J8 | Renesas Electronics America Inc | IC SRAM 36KBIT PARALLEL 68PLCC | 100% | View |
| 70V28VL20PF8 | Renesas Electronics America Inc | IC SRAM 1MBIT PARALLEL 100TQFP | 92% | View |
| UPD48576118F1-E24-DW1-E2-A | Renesas Electronics America Inc | IC DRAM 576MBIT HSTL 144TFBGA | 70% | View |
| IS43TR16256BL-125KBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 4GBIT PARALLEL 96TWBGA | 68% | View |
Submit your RFQ for CY7C135-20JCT and get a quote within 24 hours.
3J LIMITED
