Renesas Electronics America Inc
IC DRAM 576MBIT HSTL 144TFBGA
UPD48576236F1-E24-DW1-E2-A is a Memory manufactured by Renesas Electronics America Inc. IC DRAM 576MBIT HSTL 144TFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 144-TBGA.
In Stock: 5,191
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LLDRAM2 |
| Memory Size | 576Mb (16M x 36) |
| Memory Interface | HSTL |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TBGA |
| Supplier Device Package | 144-TFBGA (11x18.5) |
UPD48576236F1-E24-DW1-E2-A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT49H16M18FM-25:B | Micron Technology Inc. | IC DRAM 288MBIT PARALLEL 144UBGA | 100% | View |
| MT49H16M18FM-33:B TR | Micron Technology Inc. | IC DRAM 288MBIT PARALLEL 144UBGA | 85% | View |
| AS7C34098A-20TCN | Alliance Memory, Inc. | IC SRAM 4MBIT PARALLEL 44TSOP2 | 82% | View |
| 70261S20PF8 | Renesas Electronics America Inc | IC SRAM 256KBIT PARALLEL 100TQFP | 70% | View |
| 7005L20JG | Renesas Electronics America Inc | IC SRAM 64KBIT PARALLEL PLCC | 70% | View |
| W632GG6NB-11 | Winbond Electronics | IC DRAM 2GBIT PARALLEL 96VFBGA | 55% | View |
Submit your RFQ for UPD48576236F1-E24-DW1-E2-A and get a quote within 24 hours.
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