Renesas Electronics America Inc
IC DRAM 576MBIT HSTL 144TFBGA
UPD48576218F1-E24-DW1-E2-A is a Memory manufactured by Renesas Electronics America Inc. IC DRAM 576MBIT HSTL 144TFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 144-TBGA.
In Stock: 9,225
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LLDRAM2 |
| Memory Size | 576Mb (32M x 18) |
| Memory Interface | HSTL |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TBGA |
| Supplier Device Package | 144-TFBGA (11x18.5) |
UPD48576218F1-E24-DW1-E2-A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT49H32M9FM-33:B TR | Micron Technology Inc. | IC DRAM 288MBIT PARALLEL 144UBGA | 85% | View |
| IDT70V27S20PFI | Renesas Electronics America Inc | IC SRAM 512KBIT PARALLEL 100TQFP | 82% | View |
| CY7C194-20VC | Rochester Electronics, LLC | STANDARD SRAM, 64KX4, 20NS, CMOS | 70% | View |
| W631GU6NB-15 TR | Winbond Electronics | 1GB DDR3L 1.35V SDRAM, X16, 667M | 70% | View |
| AS4C128M8D3B-12BANTR | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 78FBGA | 63% | View |
| W631GU6NB12J | Winbond Electronics | IC SDRAM 1GB X16 800MHZ 96WBGA | 61% | View |
Submit your RFQ for UPD48576218F1-E24-DW1-E2-A and get a quote within 24 hours.
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