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UPA2816T1S-E2-AT - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single

UPA2816T1S-E2-AT

Renesas Electronics America Inc

MOSFET P-CH 30V 17A 8HWSON

UPA2816T1S-E2-AT is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 17A 8HWSON. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerWDFN.

In Stock: 5,000

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs33.4 nC @ 10 V
Vgs (Max)+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds1160 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN

Frequently Asked Questions

UPA2816T1S-E2-AT is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET P-CH 30V 17A 8HWSON

The mounting type of UPA2816T1S-E2-AT is Surface Mount.

The operating temperature range of UPA2816T1S-E2-AT is 150°C (TJ).

The package type of UPA2816T1S-E2-AT is 8-PowerWDFN.

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