Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
RJK6014DPP-E0#T2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack.
In Stock: 5,107
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 575mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
Submit your RFQ for RJK6014DPP-E0#T2 and get a quote within 24 hours.
3J LIMITED
