Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
RJK03E1DNS-00#J5 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 8-PowerWDFN.
In Stock: 80,000
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 4.5 V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
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